? 2004 ixys all rights reserved g = gate d = drain s = source tab = drain ds99228(11/04) polarhv tm power mosfet ixtq 36n50p v dss = 500 v ixtt 36n50p i d25 = 36 a r ds(on) 170 m ? ? ? ? ? advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-268 (ixtt) g s d (tab) to-3p (ixtq) g d s d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 170 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss 20 v v gsm 30 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 100 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body 250 c m d mounting torque (to-3p) 1. 13/10 nm/lb.in. weight to-3p 5.5 g to-268 5.0 g
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 36n50p ixtt 36n50p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 25 35 s c iss 4800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 510 pf c rss 60 pf t d(on) 29 ns t r v gs = 10 v, v ds = 0.5 i d25 23 ns t d(off) r g = 4 ? (external) 82 ns t f 23 ns q g(on) 135 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 nc q gd 65 nc r thjc 0.25 k/w r thck 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 100 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 300 ns q rm v r = 100v 3.3 c to-268 outline to-3p (ixtq) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved ixtq 36n50p ixtt 36n50p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 18 20 22 24 v d s - volts i d - amperes v gs = 10v 8v 5.5v 5v 6v 6.5v 7v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 36 0246 810121416 v d s - volts i d - amperes v gs = 10v 7v 6v 4.5v 5v 5.5v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v 5.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 36a i d = 18a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 0 10 20304050 607080 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 36n50p ixtt 36n50p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v g s - volts v ds = 250v i d = 18a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixtq 36n50p ixtt 36n50p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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